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27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1003 Chip Device Layout
Features
Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical) Detector (diff ) Output at 20 dBm 3
Units GHz dB dB dB dB dB dBm dBm VDC VDC mA VDC Min. 27.0 -1.0 Typ. 12.0 18.0 15.0 +/-1.0 35.0 +24.0 +34.0 +4.5 -0.7 440 0.3 Max. 35.0 +5.5 0.0 880 -
(1) Measured at +17 dBm per tone output carrier level across the full frequency band. (2) Measured using constant current. (3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k.
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Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +34.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
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Absolute Maximum Ratings
(4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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+6.0 VDC 950 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF Table 4 MTTF Table 4
Page 1 of 6
27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1003
Power Amplifier Measurements
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10
XP1003 S21 Vd 1,2,3,4=4.5V, Id 1,2,3,4=440mA
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
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29 30 31 Frequency, GHz 32
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38
XP1003 S11 Vd 1,2,3,4=4.5V, Id 1,2,3,4=440mA
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38
XP1003 S22 Vd 1,2,3,4=4.5V, Id 1,2,3,4=440mA
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e42 40 38
IM3, dBc
XP1003, Average IM3: Vd 1,2,3,4=4.5V, Id 1,2,3,4=440mA, measured at +17dBm per tone
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20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
36 34 32 30 28 26 27 28 33 34 35 R1C2 R2C2 R3C2 R4C2 R4C3 R5C2 R5C3 R6C2 R6C3
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80
XP1003 S12 Vd 1,2,3,4=4.5V, Id 1,2,3,4=440mA
Page 2 of 6
27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
Mechanical Drawing
2.500 (0.098)
0.957 (0.038)
1.357 (0.053)
1.757 (0.069)
2.157 (0.085)
2.757 (0.109) 2.557 2.957 (0.101) (0.116)
P1003
2
3
4
5
6
7
8
0.765 (0.030)
1
9
13
0.0
12
11
10
0.0
(Note: Engineering designator is 30H2BA0093)
Bias Arrangement
Vd1,2 Vg1,2
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2
3
4
5
6
7
8
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VOUT1 VIN
Rin
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.253 mg. Bond Pad #1 (RF In) Bond Pad #4 (Vg2) Bond Pad #10 (Vd4) Bond Pad #7 (VIN) Bond Pad #2 (Vg1) Bond Pad #5 (Vd2) Bond Pad #8 (VOUT2) Bond Pad #11 (Vg4) Bond Pad #3 (Vd2) Bond Pad #6 (VOUT1) Bond Pad #9 (RF Out) Bond Pad #12 (Vd3) Bond Pad #13 (Vg3)
VOUT2
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0.957 (0.038)
1.357 (0.053)
1.757 2.157 (0.069) (0.085)
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3.400 (0.134)
Bypass Capacitors - See App Note [3]
1
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RF In
9 RF Out
13
12
11
10
Vg3,4
Vd3,4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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0.677 (0.027)
Page 3 of 6
27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1003
App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at Vd(1,2)=4.5V Id(1+2)=220mA, and
App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector,
which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The common bias terminal is Vin, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vin port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively, Vin can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rin in the range 3 - 6k.
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
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Rth
55 deg Celsius 75 deg Celsius 95 deg Celsius
117 deg Celsius
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Backplate Temperature
Channel Temperature
MTTF Hours
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App Note [3] Bias Arrangement -
FITs
31.3 C/W 33.5 C/W 35.5 C/W
2.35E+09 1.56E+08 1.46E+07
4.26E-01 6.40E+00 6.85E+01
141.3 deg Celsius
Bias Conditions: Vd1=Vd2=Vd3=Vd4=4.5V, Id1=Id2=Id3=Id4=110 mA
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165.2 deg Celsius
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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Vd(3,4)=4.5V Id(3+4)=220mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA, Id2=Id4=110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
Page 4 of 6
27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
P1003
Device Schematic
R=10 R=15 R=10
2 1 2 1 3
R=10
Vd1
R=10
3
R=300 R=50.0
1 2
R=300 R=50
R=100
Vg2
4
3
RF In
R=300 R=50
3
Vg3
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1 2 4 3
Vg1
R=50 R=100 R=100 R=1K
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3 1 2
R=300
1 2
R=100
Vg4
R=1K
R=10 R=15
R=10
R=200
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Vd3
R=15
R=10
Vd4
R=10
Pr
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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R=50
R=15
Vd2
RF Out
Vout2 R=50 Vout1
R=15 R=200
Vin
Page 5 of 6
27.0-35.0 GHz GaAs MMIC Power Amplifier
May 2005 - Rev 05-May-05
Handling and Assembly Information
Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
P1003
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
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ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
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Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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